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ION IMPLANTATION

INTRODUCTION

 

The laboratory is dedicated to the doping of semiconductor wafers by ion implantation at high energy

 

HIGH ENERGY ION IMPLANTATOR

 

MANUFACTURER: 1.7MV HV-TANDETRON 4117HC

  • IMPLANTED SPECIES
    • ​H, He, B, N, O, Al, Si, P, As
  • ENERGY RANGE
    • 500 - 5000 KeV
  • TEMPERATURE
    • -60 °C - 700 °C

PROCESSES

MEMS ACCELEROMETER BASED ON n- AND p-TYPE SILICON PIEZORESISTORS SEM IMAGE OF A 4,6 um HIGH LiNbO3 RIDGE CROSS SECTION AFTER 5 MeV Cu+ IMPLANTATION AND HF ETCHING

 FOR MORE INFORMATION VISIT THE SMEDIP PROJECT HOME PAGE

SILICON CARBIDE SPAD (SINGLE PHOTON AVALANCHE DIODE)

 

FOR MORE INFORMATION VISIT POWER AND HIGH FREQUENCIES DEVICES HOME PAGE

FOR MORE INFORMATION VISIT OPTOELECTRONICS HOME PAGE

 

CONTACT PERSON: MICHELE BELLETTATO

 

MICRO/NANO FABRICATION HOME PAGE

 

Research Topics