Alcatel A601E Deep Reactive Ion Etching System

Alcatel A601E Deep Reactive Ion Etching System

  • Single wafer up to 4 inch
  • Remote source ICP configuration
  • Source
    • R.F. generator up to 3kW at 13.56 MHz
  • Substrate holder
    • R.F. generator up to 1kW at 13.56 MHz
    • L.F. generator 500W at 40-460 kHz
    • R.F. & L.F. + Switching
    • Cooled down to -20°C
  • 5 process gases: O2, C4F8, SF6, CH4, He
  • Process pressure 1.9 - 16 Pa