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INTRODUCTION

The laboratory comprises all the facilities to define micro and sub-micro patterns on planar substrates by means of contact optical lithography with a resolution down to 700 nm. Moreover the bay has hot plate for thick SU-8 photoresist treatment.

CLEAN ROOM ISO 5 (CLASS 100)

PRINCIPAL EQUIPMENT

CONTACT MASK ALIGNER

MANUFACTURER: KARL SUSS MODEL MA4

  • 350W high-pressure mercury lamp broad band exposure
  • Soft, hard, low vacuum, vacuum contact; proximity and flood exposure modes
  • Wavelenght range
    • UV400 350 - 450 nm
    • UV300 280 - 350 nm
  • Up to 1um resolution
  • Dual microscope alignment system
  • Advanced optical filters (AFP)
  • Optical backside alignment system (BSA)
  • Mask size: 5"
  • Sample size: uo to 100 mm

MANUFACTURER: KARL SUSS MODEL MA/BA6

  • Hg lamps 1000 W
  • Soft, hard, low vacuum, vacuum contact; proximity and flood exposure modes
  • Wavelenght range
    • UV400 350 - 450 nm
    • UV300 280 - 350 nm
    • UV250 240 - 260 nm
  • Up to 700 nm resolution
  • Dual microscope alignment system
  • Advanced optical filters (AFP)
  • Mask size: 5"
  • Sample size: uo to 100 mm
PROGRAMMABLE HOT PLATE

MANUFACTURER: SAWATEC

Description:

Hotplate developed for ultra-high precise soft bake and hard bake processes in lithography. Multi-zone heating system. Very high temperature distribution, which is adjustable for each zone

Performance data:

  • Temperature range: ambient temperature up to 300°C
  • Temperature accuracy: +/- 0.3°C at 100°C
  • Can processed up to 4 4-inch wafers at the same time, or 2 from 6 inches and 1 from 8 inches

PROCESSES AVAILABLE

THICK SU-8 PATTERNING FOR

  • MICROFLUIDIC APPLICATION
  • WAFER BONDING TECHNIQUE
  • MOLDING FOR PDMS
  • STRUCTURAL MATERIAL FOR MEMS DEVICES
  • HIGH ENERGY ION IMPLANTATION LAYER STOPPER

50 um thick SU-8 Fabry-Perot interferometer 50 um thick SU-8 2050 structures

THICK POSITIVE FOTORESIST FOR

  • SOFT MASK FOR DEEP RIE ETCHING
  • REFLOW TECHNIQUE

 
AZ 9260 POSITIVE PHOTORESIST MICROLENS  
LIFT-OFF PROCESS: SINGLE AND DUAL LAYER
 

Negative photoresist cross-section optmized for a single and double lift-off process

 

 

 

 

 

 

 

 

CONTACT PERSON: FIILIPPO BONAFE'

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