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Scientific Production

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

R Nipoti, M Puzzanghera, G Sozzi

Al+ ion implanted 4H-SiC vertical p+-in diodes: Processing dependence of leakage currents and OCVD carrier lifetimes

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

P Fedeli, M Puzzanghera, F Moscatelli, RA Minamisawa, G Alfieri, U Grossner, R Nipoti

Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1