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The authors combined electrical and structural characterizations with analytical and spectroscopic measurements in order to fully analyze oxynitride nanofilms on Si that were produced in a minibatch type plasma nitridation reactor. The authors demonstrate that for the investigated samples the result of nitridation is different in the 2-nm-thick SiO2 films compared to the 5-nm-thick films. In the first case, nitridation results in an increase of the oxide film thickness compared to the non-nitrided film, with a consequent decrease in leakage current and an increase in the electrically measured equivalent oxide thickness (EOT). In contrast, nitridation of the 5-nm-thick SiO2 films leads to a reduction of both the leakage current and EOT. Finally, the authors demonstrate that the applied nitridation process results in the desired nitrogen profile with high nitrogen concentration near the top surface or the middle of the SiON film and …
American Vacuum Society
Publication date: 
2 Mar 2011

E Hourdakis, AG Nassiopoulou, A Parisini, MA Reading, JA Van Den Berg, L Sygellou, S Ladas, P Petrik, A Nutsch, M Wolf, G Roeder

Biblio References: 
Volume: 29 Issue: 2 Pages: 022201
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena