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A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at λ=1550  nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ=19  V×cm allowing the design of shorter devices with respect to p-i-n structure.
International Society for Optics and Photonics
Publication date: 
1 Aug 2013

Sandro Rao, Giuseppe Coppola, Caterina Summonte, Mariano A Gioffrè, Francesco G Della Corte

Biblio References: 
Volume: 52 Issue: 8 Pages: 087110
Optical Engineering