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Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source–drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.
Royal Society of Chemistry
Publication date: 
1 Jan 2011

Andrea Liscio, Giulio Paolo Veronese, Emanuele Treossi, Francesco Suriano, Francesco Rossella, Vittorio Bellani, Rita Rizzoli, Paolo Samorì, Vincenzo Palermo

Biblio References: 
Volume: 21 Issue: 9 Pages: 2924-2931
Journal of Materials Chemistry