Al+ implanted p+/n 4H-SiC diodes were realized via planar technology. The p+/n junctions were obtained by hot implantation at 400 C, followed by a post implantation annealing at 1600 C in Silane ambient. 136 diodes and other test structures were measured: the current voltage^ curves and the resistivity of the implanted layer were investigated at room temperature. The majority of the measured diodes had a turn on voltage of about 1.75 V, a forward characteristic with exponential trend and ideality factor equal to 1.2, and a very low spread in the distribution of the reverse leakage current values at–100V. The average reverse leakage current value is (9.7±0.4)× 10-9 A/cm2. The breakdown voltage of these diodes approached the theoretical value for the use epitaxial 4H-SiC layer, ie 0.75–1.0 kV. All these positive results are penalized by the high resistivity value of the implanted Al+ layer, which amounts to 11 W· cm …