Ion implantation is a relevant technology for the fabrication of pn interfaces in several SiC electronic devices; ion implanted source/drain and body regions in commercial 4H-SiC MOSFET [1] and buried grids in JBSD [2] can be cited as examples. Previous studies have shown that the efficiency of the electrical doping by ion implantation increases with the increase of the post implantation annealing temperature [3-4] and time [5]. Previous studies have also shown that n-type 4H-SiC epi-layers treated at so high temperatures as those ...