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Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2006
Authors: 

R Bergamini, F Nipoti, F Poggi, A Moscatelli, M Bertuccio, G Canino

Biblio References: 
Volume: 527529 Pages: 815-818
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=15471170290886600789&hl=en&oi=scholarr

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