Ultra‐fast high‐temperature microwave annealing at temperatures as high as 2050 °C for 30 s has been performed on phosphorus ion‐implanted 4H‐SiC for phosphorus doping concentrations in the range 5×1019 cm−3–8×1020 cm−3. For comparison, inductive heating furnace anneals were performed at 1800 °C–1950 °C for 5 min. Electrical resistivity of the P+‐implanted samples decreased with increasing annealing temperature reaching a minimum value of 6.8×10−4 Ωcm for 2050 °C/30 s microwave annealing and a slightly higher value for 1950 °C/5 min inductive heating furnace annealing. X‐ray rocking curve measurements showed that the microwave annealing not only removed the lattice damage introduced by the ion‐implantation process, but also the defects present in the original virgin sample as well.