Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD | Bologna UNIT

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Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2006

Authors:

SP Bergamini, F Rao, R Hoff, AM Nipoti, E Saddow, SE Oborina

Biblio References:

Volume: 527529 Pages: 839-842

Origin:

Materials Science Forum

Link:

http://scholar.google.com/scholar?cluster=174375798007915383&hl=en&oi=scholarr