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Type: 
Journal
Description: 
This paper shows a comprehensive experimental and numerical investigation of proton-irradiated diodes for high-power snubberless applications. By means of DC and transient current–voltage measurements, OCVD extraction of lifetimes, C–V profiling, and DLTS trap characterization, a wide set of parameters was experimentally extracted and fed into a physically accurate mixed-mode simulation model. The numerical results are shown to be consistent with the available measured data, for example in showing the much better turn-off softness of proton-irradiated samples versus electron-irradiated ones. The complete physical/electrical model set-up in this work can now be used as an aid in the design and development of new proton-irradiated diodes.
Publisher: 
Pergamon
Publication date: 
1 Feb 2005
Authors: 

P Cova, R Menozzi, M Portesine, M Bianconi, E Gombia, R Mosca

Biblio References: 
Volume: 49 Issue: 2 Pages: 183-191
Origin: 
Solid-state electronics