Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC | Bologna UNIT

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Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2007

Authors:

U Grossner, M Servidori, M Avice, O Nilsen, H Fjellvag, R Nipoti, BG Svensson

Biblio References:

Volume: 556557 Pages: 683-686

Origin:

Materials Science Forum

Link:

http://scholar.google.com/scholar?cluster=18049167705864156026&hl=en&oi=scholarr