Vertical 4H-Silicon Carbide p + -i-n diodes are obtained by a selective area 1.5×10 20 cm -3 Al + ion implantation of the anodes. These diodes are fabricated with identical steps except post-implantation annealing that is 1650°C/25 min and 1950°C/5 min. Electrical characterization in the temperature range 25°C-290°C is performed. The 1650°C/25 min diodes have forward currents with a positive temperature coefficient. The 1950°C/5 min diodes have forward current characteristics with a crossover point from a positive to a negative temperature coefficient that makes such characteristics almost stable versus temperature.