-A A +A

Chapter 5-SiC Technology-5.1 Doping and Implantation-JV Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600 (degree) C

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2005
Authors: 

F Bergainini, SP Rao, SE Saddow, R Nipoti

Biblio References: 
Volume: 483485 Pages: 629-632
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=6474969569802539451&hl=en&oi=scholarr

Scientific Production