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The infrared (IR) absorption dependence on visible light illumination has been measured in doped and undoped hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films grown by plasma enhanced chemical vapour deposition. The measurements were made by a highly sensitive technique which exploits properly designed a-Si1−xCx:H/ZnO test waveguides for lengthening the interaction region between the IR and visible (VIS) radiations in the material. Experimental data show that boron doping strongly enhances the VIS light induced variation of the IR absorption, whereas the increase in carbon content has a quenching effect on the phenomenon. The a-SiC:H films have been also characterized by photoluminescence measurements. The spectra are dominated by a photoluminescence band, ranging between 1.4 eV and 1.9 eV. This band is enhanced by the increase in carbon content, while is strongly …
Publication date: 
15 Jul 2006

Francesco Giuseppe Della Corte, Maria Grazia Donato, Massimo Gagliardi, Giacomo Messina, Maria Arcangela Nigro, Saveria Santangelo, Caterina Summonte

Biblio References: 
Volume: 352 Issue: 23-25 Pages: 2647-2651
Journal of non-crystalline solids