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Type: 
Journal
Description: 
The effect of a 1500 C treatment on 1× 10 20 cm-3 Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 C is studied in this work. Up to 240 min annealing time at 1500 C, the Al electrical activation reached at 1850-1950 C is preserved.
Publisher: 
IOP Publishing
Publication date: 
17 Aug 2017
Authors: 

Roberta Nipoti, Mariaconcetta Canino, Maurizio Puzzanghera, Giovanna Sozzi

Biblio References: 
Volume: 80 Issue: 7 Pages: 101
Origin: 
ECS Transactions