Type:
Journal
Description:
The effect of a 1500 C treatment on 1× 10 20 cm-3 Al+ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 C is studied in this work. Up to 240 min annealing time at 1500 C, the Al electrical activation reached at 1850-1950 C is preserved.
Publisher:
IOP Publishing
Publication date:
17 Aug 2017
Biblio References:
Volume: 80 Issue: 7 Pages: 101
Origin:
ECS Transactions