Ni/Al/Ti ohmic contacts with preserved form factor during alloying at 1000 C, almost constant specific resistance value in the low 10-4 Ωcm 2 decade, and a very weak temperature dependence in the range 25-290 C, have been obtained on 1× 10 20 cm-3 Al+ implanted p-type 4H-SiC of different resistivity in the range 6× 10-2-1 Ωcm. A qualitative data analysis for understanding the hole transport mechanism through the formed metal/semiconductor interface is also shown.