Type:
Journal
Description:
Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 107. Each single component was studied separately and upon blending by means of electrical characterization, ambient …
Publisher:
American Chemical Society
Publication date:
24 Dec 2018
Biblio References:
Volume: 31 Issue: 17 Pages: 6491-6498
Origin:
Chemistry of Materials