Previous and recent results on the electrical activation of ion implanted Al+ in 4H-SiC are analyzed. Samples with homogeneous ion implanted dopant concentrations in the decades 10 18-10 20 cm-3, implantation temperatures in the range 300–400 C, post implantation annealing temperatures in the range 1500-1950 C, and post implantation annealing times in the range 5 min–75.5 h are taken into account. The selected results fulfills the requirement of minimum two annealing times per annealing temperature and per ion implantation conditions. A new insight on the dynamics of the post implantation annealing in Al implanted 4H-SiC takes origin from this data analysis