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The root mean square (rms) surface roughness extracted from atomic force microscopy is widely employed to complement the characterisation of ion implantation processes in 4H‐SiC. It is known that the protection of a carbon film eliminates or mitigates roughening of the SiC surface during postimplantation annealing. This study, based on a rich original data collection of Al+ ion implanted 4H‐SiC samples, allows for a quantitative description of the surface morphology as a function of the annealing temperature and time and of the Al implanted concentration. With increasing thermal budget, the evolution from flat, to blurred with ripples, granular, and finally jagged surface, results in a monotonous increase in the root mean square roughness. Additional information is given by the trends of the roughness exponent and of the correlation length, extracted from the height‐height correlation function, which account for the …
Publication date: 
1 Dec 2020

Marica Canino, Paolo Fedeli, Cristiano Albonetti, Roberta Nipoti

Biblio References: 
Volume: 280 Issue: 3 Pages: 229-240
Journal of Microscopy