Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The films were grown on crystalline Si(100) and Al2O3(0001) and amorphous SiO2 and a-Al2O3 substrates. Their structural properties were compared with those of the Sb2Te3/Si(111) heterostructure. In addition to the effect of the substrate, the influence of pre- and post-growth thermal annealing is also presented. The quality of the films is discussed by comparing their morphological properties, such as roughness and granularity, and ascertaining their crystallinity and their in-plane and out-of-plane orientation.