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In this work, we study the impact of the dose rate on the electrical properties of aluminum (p-body, p+-body-contact) and phosphorous (n-source/drain) implanted 4H-SiC. We find no significant differences for dose rates ranging from 1× 10 11 cm-2 s-1 to 2− 7× 10 12 cm-2 s-1. AFM scans across implanted and non-implanted regions after thermal oxidation and subsequent oxide etching reveal a clear dependence of the oxidation rate on the conduction type and doping concentration. In addition, we observe an increasing (decreasing) oxidation rate for increasing doping concentrations of the n-type (p-type) ion implanted areas.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2022

Judith Woerle, Manuel Belanche, Marco Negri, Christopher Lamontagne, Filippo Bonafe, Roberta Nipoti, Ulrike Grossner

Biblio References: 
Volume: 1062 Pages: 263-267
Materials Science Forum