CHALLENGE is a H2020-EU.2.1.3 that proposes to a new approach to improve the quality reduction of defects in bulk cubic silicon carbide material We propose a new approach to improve the quality and to reduce stress: it is necessary to modify the structure of the substrate (compliance substrate) in order to force the system to reduce the defects while increasing the thickness of the layer.
Furthermore, by using the typical bulk growth techniques used for 4H-SiC it is possible to grow bulk 3C-SiC wafers, improving considerably the quality of the material.

Contact person: Roberta Nipoti, Fulvio Mancarella