Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing | Bologna UNIT

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Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2005

Authors:

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

Biblio References:

Volume: 483485 Pages: 625-628

Origin:

Materials Science Forum

Link:

http://scholar.google.com/scholar?cluster=7541062564279080119&hl=en&oi=scholarr