Chapter 5-SiC Technology-5.1 Doping and Implantation-n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

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Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2005

Authors:

M Canino, A Castaldini, A Cavallini, F Moscatelli, R Nipoti, A Poggi

Biblio References:

Volume: 483485 Pages: 649-652

Origin:

Materials Science Forum

Link:

Scientific Production