Charge transport in nanocrystalline SiC with and without embedded Si nanocrystals (Si NCs) prepared by annealing of a− S i 1− x C x: H precursors is studied using temperature-dependent current-voltage measurements supported by electron spin resonance and mass spectrometry data. Transport is Ohmic in all films at all temperatures and the temperature dependence of conductivity shows that the materials behave as disordered semiconductors, exhibiting extended-state transport at high temperature and variable-range hopping transport at low temperature. Grain-boundary-, surface-, and interface-dominated transport is systematically ruled out. Films are n type, and films with Si NCs exhibit up to 10 3 times higher conductivity (up to 0.1 S c m− 1) after exposure to a hydrogen plasma which passivates dangling bonds, particularly on Si NCs. A forming gas anneal does not have such an effect, indicating that …