In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of 10 16 n/cm 2. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 10 16 n/cm 2 shows better results in terms of charge collection efficiency using a p-type silicon detector