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Article Preview Article Preview Article Preview A vertical 4H-SiC pin diode with 2× 10 20 cm-3 Al+ implanted emitter and 1950 C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3× 10-15, 1.7× 10 14, and 1.8× 10-14 cm 2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1× 10 13 cm 2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.
Trans Tech Publications
Publication date: 
1 Jan 2017

Hussein M Ayedh, Maurizio Puzzanghera, Bengt Gunnar Svensson, Roberta Nipoti

Biblio References: 
Volume: 897 Pages: 279-282
Materials Science Forum