The fabrication of a fully ion-implanted and microwave annealed vertical pin diode using high purity semi-insulating 4H-SiC substrate has been demonstrated for the first time. The thickness of the intrinsic region is the wafer thickness 350 µm. The anode and cathode of the diode have been doped with Al and P, respectively, to concentrations of few times 10 20 cm-3 by ion implantation. The post implantation annealing has been performed by microwave heating the samples up to 2100 C. The device rectifying behavior indicates that a carrier modulation takes place in the bulk intrinsic region.