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Emerging wide bandgap semiconductor devices such as the ones built with SiC have the potential to revolutionize the power electronics industry through faster switching speeds, lower losses, and higher blocking voltages, which are superior to standard silicon-based devices. Besides the widely used 4H-SiC, the cubic polytype 3C-SiC, with 2.3 eV band gap, has interesting features such as possibility to be grown on a silicon substrate, a reduced density of states at the SiC/SiO2 interface, and a higher channel mobility—characteristics that are ideal for its incorporation in metal oxide semiconductor field effect transistors. However, realization of defect free bulk 3C-SiC wafers is very challenging and p+ doping and activation mechanisms using ion implantation followed by thermal annealing are not well-known. Within the framework of the European R&D project CHALLENGE, we studied ion implantation of Aluminum …
Springer International Publishing
Publication date: 
15 Dec 2022

F Torregrosa, M Canino, F Li, F Tamarri, B Roux, S Morata, F La Via, M Zielinski, R Nipoti

Biblio References: 
Pages: 1-6
MRS Advances