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We performed deep level transient spectroscopy (DLTS), in capacitance, constant-capacitance and current mode, on 5 MeV proton irradiated 4H-SiC p+-in diodes. The study has revealed the presence of several majority and minority traps, ranging in the 0.4-1.6 eV below the conduction band edge and in the 0.4-1.5 eV above the valence band edge. We present a comparison of the results obtained with the three modes and discuss the nature of the detected traps, in the light of previous results found in the literature. At last, the impact of the irradiation on the minority carrier lifetime is evaluated by electrical measurements.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2017

Giovanni Alfieri, Andrei Mihaila, Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Phillippe Godignon, José Millán

Biblio References: 
Volume: 897 Pages: 246-249
Materials Science Forum