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We review here the possibilities opened by a recent development of the Monte Carlo binary collision approximation (MC-BCA) simulation of Rutherford backscattering spectrometry-channeling (RBS-C) spectra for the study of radiation damage in monocrystalline materials. The ion implantation of silicon has been chosen as a case study. Atomic-scale modeling of defect structures was used to determine the location of interstitial atoms in the host lattice. Among possible candidate defects, we have considered the elementary hexagonal, tetrahedral, -split interstitials, the Bond-defect and one type of tetra-interstitial cluster. For each defect model a large Si supercell was populated with a proper defect depth distribution and then it was structurally relaxed by the application of the classical EDIP potential. This model system was then given as an input to the MC-BCA simulation code and the spectra corresponding to …
Publication date: 
1 Apr 2005

M Bianconi, E Albertazzi, S Balboni, Luciano Colombo, G Lulli, A Satta

Biblio References: 
Volume: 230 Issue: 1-4 Pages: 185-192
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms