IMM of Bologna studies the optimization of the electrical doping of single crystal 3C- and 4H-SiC poly-types by ion implantation. When the fabrication of SiC electronic devices is concerned, the...
IMM of Bologna studies the optimization of the electrical doping of single crystal 3C- and 4H-SiC poly-types by ion implantation. When the fabrication of SiC electronic devices is concerned, the...