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Home » Research Topics » Application Areas » Micro/Nano Electronics » Power and High Frequencies Devices
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Power and High Frequencies Devices

Power and High Frequencies Devices
Ion implantation technology for the selective area doping of SiC microelectronic devices

IMM of Bologna studies the optimization of the electrical doping of single crystal 3C- and 4H-SiC poly-types by ion implantation. When the fabrication of SiC electronic devices is concerned, the...

Research Topics

  • Application Areas
    • Micro/Nano Electronics
      • Power and High Frequencies Devices
      • Flexible and Large Area Electronics
      • Devices for Information Storage and Processing
    • Functional Materials and Devices
      • MOEMS and Multifunctional Systems
      • Chemical, Physical and Biological Sensors
      • Functional Nanomaterials
    • Photonics
      • Energy Conversion Devices
      • Optoelectronic, Plasmonic and Photonic Devices
  • Technological Areas
    • Synthesis and Micro/Nano Fabrication
    • Characterization
    • Modelling

The IMM, belonging to the Physics and Matter Technologies Department of CNR, is organized in 6 Units and one Headquarters.

Units in Italy

  • IMM
  • Agrate UNIT
  • Bologna UNIT
  • Catania HQ
  • Catania UNIT
  • Lecce UNIT
  • Rome UNIT

Contact info

CNR Institute for Microelectronics and Microsystems
  • 40129 - Bologna, Italy - Via Gobetti, 101
  • Deputy Director: Dr. Vittorio Morandi
  • (+39) 051 639 9141
  • direzione@bo.imm.cnr.it
  • Secretariat
  • (+39) 051 639 9143
  • (+39) 051 639 9216
  • segreteria@bo.imm.cnr.it

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Bologna Unit of the Institute for Microelectronics and Microsystems.