Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

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Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2006

Authors:

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Biblio References:

Volume: 527529 Pages: 979-982

Origin:

Materials Science Forum

Link: