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Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient
Type:
Journal
Description:
Publisher:
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date:
1 Jan 2006
Authors:
A Moscatelli, F
Poggi
, A Marino, G Scorzoni, R
Sanmartin
, M
Nipoti
Biblio References:
Volume: 527529 Pages: 979-982
Origin:
Materials Science Forum
Link:
http://scholar.google.com/scholar?cluster=16975358014509545621&hl=en&oi=scholarr
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