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In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO 2 matrix grown by RF magnetron sputtering at a low temperature (350 C). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping capabilities, with the memory effect and charge retention time larger for hole carriers. The presented results demonstrate that amorphous floating-gate SiGe layers embedded in SiO 2 may constitute a suitable alternative for memory applications.
IOP Publishing
Publication date: 
7 Feb 2013

EMF Vieira, Regis Diaz, Jeremie Grisolia, Andrea Parisini, Javier Martín-Sánchez, S Levichev, Anabela G Rolo, A Chahboun, MJM Gomes

Biblio References: 
Volume: 46 Issue: 9 Pages: 095306
Journal of Physics D: Applied Physics