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We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10μm thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm.
International Society for Optics and Photonics
Publication date: 
28 Apr 2010

Angelo Gulinatti, Francesco Panzeri, Ivan Rech, Piera Maccagnani, Massimo Ghioni, Sergio D Cova

Biblio References: 
Volume: 7681 Pages: 76810M
Advanced Photon Counting Techniques IV