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Type: 
Journal
Description: 
A nanomemristor based on SiO 2 is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.
Publisher: 
WILEY‐VCH Verlag
Publication date: 
2 Mar 2012
Authors: 

Massimiliano Cavallini, Zahra Hemmatian, Alberto Riminucci, Mirko Prezioso, Vittorio Morandi, Mauro Murgia

Biblio References: 
Volume: 24 Issue: 9 Pages: 1197-1201
Origin: 
Advanced Materials