Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation | Bologna UNIT

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Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Type:

Journal

Description:

Publisher:

Publication date:

1 Jan 2008

Authors:

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Biblio References:

Volume: 768 Issue: 600 Pages: 699

Origin:

Materials Science Forum

Link:

http://scholar.google.com/scholar?cluster=13898613518972071222&hl=en&oi=scholarr