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In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 °C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 °C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the …
American Institute of Physics
Publication date: 
15 May 2012

EMF Vieira, J Martín-Sánchez, Anabela G Rolo, Andrea Parisini, Maja Buljan, I Capan, Eduardo Alves, Nuno P Barradas, Olinda Conde, Sigrid Bernstorff, A Chahboun, S Levichev, MJM Gomes

Biblio References: 
Volume: 111 Issue: 10 Pages: 104323
Journal of Applied Physics