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The role of the heating rate in the postimplantation annealing process of SiC was investigated. Structural and electrical properties of an Al+ implanted junction in n-type 4H–SiC were studied for a 30min annealing at 1600°C in argon atmosphere and changing the heating rate between 7 and 40°C∕s. With the increasing of the heating rate the surface roughness increases, but the electrical performance of the devices improves. In particular, the faster ramp-up rate reduces the sheet resistance of the implanted layer of about 40% with respect to the slowest process and significantly reduces the leakage current of the diodes.
American Institute of Physics
Publication date: 
17 Apr 2006

A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera

Biblio References: 
Volume: 88 Issue: 16 Pages: 162106
Applied physics letters