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Square shaped annular lateral p+–i–n+ diodes on high purity semi-insulating (HPSI) 4H-SiC are fabricated by Al+ and P+ ion implantation to obtain anode and cathode regions, respectively. All the diodes have the same size central anode surrounded by an intrinsic region, which is surrounded by an annular cathode. Anode area and annular cathode width are fixed for all diodes, only the lateral length of the intrinsic region is varied. Post implantation annealing is performed at 1950 C for 10 min. Static forward and reverse characteristics are measured in the temperature range of 30-290 C. For all diodes, the reverse current is below the instrument detection limit of 10-14 A up to 100 C at 200 V, the maximum reverse bias employed in this study. The reverse current increased up to low 10 8 A for 200 V reverse bias at 290 C. Forward currents overlap at the low voltage region once they exceed the instrument detection …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2015

Roberta Nipoti, Francesco Moscatelli, Alberto Roncaglia, Filippo Bonafè, Fulvio Mancarella, Pietro De Nicola, Anindya Nath, Mulpuri V Rao

Biblio References: 
Volume: 821 Pages: 620-623
Materials Science Forum