In this work we report the results of both theoretical and experimental strain analysis of Silicon waveguides and couplers. Simulations of induced stress and strain distributions on photonic structures (waveguides with 450 × 220 nm cross section) have been performed taking into account a ~375 nm thick Si3N4 straining layer. The Convergent Beam Electron Diffraction (CBED) technique has also been employed to provide locally accurate strain measurements on fabricated silicon rib and coupling structures across the nitride-to-silicon interface, showing a good match between multiphysics simulations and measurements along the rib cross-section, resulting in notable attained strain levels.