The current-voltage characteristics of Al+ implanted 4H-SiC p+ n junctions show an important reduction of leakage currents with diode aging at room temperature. The case of a family of diodes that immediately after manufacture had forward current density increasing from 10-9 to 10-6 A/cm2 when biased from 0 and 2 V, and had a reverse leakage current density of@ 5× 10-7 A/cm2 when biased at 100 V, is here presented and discussed. During diode manufacturing a post implantation annealing at 1600 C for 30 min was followed by a 1000 C 1 min treatment for metal contacts alloying. After 700 days of storage at room temperature, the diode reverse current density reached an asymptotical value of@ 4× 10-11 A/cm2 that is four order of magnitude lower than the initial one. A 430 C annealing that was made after 366 days is responsible of a decrease of one of these four orders of magnitude, but it does not interrupt …