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This work presents the growth of b SiC on silicon by VPE performed in a home built, horizontal, cold wall reactor. Test structures used to assess the stresses in the film were obtained either by an etch through the wafer from the bottom side of the wafer to produce membranes or an attack from the front to reveal cantilevers. Membranes and cantilevers presented both compressive and tensile strain, depending on film thickness. Raman spectroscopy was used to study strain and defects.
IOP Publishing
Publication date: 
25 Sep 2009

Matteo Bosi, Giovanni Attolini, Bernard E Watts, Cesare Frigeri, Francesca Rossi, Antonella Poggi, Alberto Roncaglia, Fulvio Mancarella, Oscar Martinez, Vanesa Hortelano

Biblio References: 
Volume: 25 Issue: 8 Pages: 1031
ECS Transactions