Analysis of electron traps at the 4H-SiC | Bologna UNIT

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Analysis of electron traps at the 4H-SiC

Type:

Journal

Description:

Publisher:

American Institute of Physics

Publication date:

1 Jan 2010

Authors:

I PINTILIE, CM TEODORESCU, F MOSCATELLI, R NIPOT, A POGGI, S SOLMI, LS LØVLIE, BG SVENSSON

Biblio References:

Volume: 108 Issue: 2

Origin:

Journal of applied physics

Link:

http://scholar.google.com/scholar?cluster=13295338460388645940&hl=en&oi=scholarr