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Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody …
AIP Publishing LLC
Publication date: 
21 Jun 2017

Rosario Raciti, Rahim Bahariqushchi, Caterina Summonte, A Aydinli, Antonio Terrasi, Salvo Mirabella

Biblio References: 
Volume: 121 Issue: 23 Pages: 234304
Journal of Applied Physics