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In this work, we compare the results of different Cliff–Lorimer (Cliff & Lorimer 1975) based methods in the case of a quantitative energy dispersive spectrometry investigation of light elements in ternary C–O–Si thin films. To determine the Cliff–Lorimer (C–L) k-factors, we fabricated, by focused ion beam, a standard consisting of a wedge lamella with a truncated tip, composed of two parallel SiO 2 and 4H-SiC stripes. In 4H-SiC, it was not possible to obtain reliable k-factors from standard extrapolation methods owing to the strong C K-photon absorption. To overcome this problem, an extrapolation method exploiting the shape of the truncated tip of the lamella is proposed herein. The k-factors thus determined, were then used in an application of the C–L quantification procedure to a defect found at the SiO 2/4H-SiC interface in the channel region of a metal-oxide field-effect-transistor device. As in this procedure, the …
Cambridge University Press
Publication date: 
1 Jun 2018

Andrea Parisini, Stefano Frabboni, Gian Carlo Gazzadi, Rodolfo Rosa, Aldo Armigliato

Biblio References: 
Volume: 24 Issue: 3 Pages: 193-206
Microscopy and Microanalysis