Forward JD-VD curves of 4H-SiC pin diodes are analyzed by means of an analytical model in order to justify the presence of a crossing-point. The interlacing behaviour occurring in the JD-VD curves of 4H-SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing-point behaviour. Comparisons with experimental data confirm the analytic and simulated results.
13 Jul 2015
Materials Science Forum