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Type: 
Journal
Description: 
Forward JD-VD curves of 4H-SiC pin diodes are analyzed by means of an analytical model in order to justify the presence of a crossing-point. The interlacing behaviour occurring in the JD-VD curves of 4H-SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing-point behaviour. Comparisons with experimental data confirm the analytic and simulated results.
Publisher: 
Publication date: 
13 Jul 2015
Authors: 

Luigi Di Benedetto, Gian Domenico Licciardo, Salvatore Bellone, Roberta Nipoti

Biblio References: 
Origin: 
Materials Science Forum